Memory Cells, Memory Cell Constructions, and Memory Cell Programming Methods

ABSTRACT

Some embodiments include memory cells including a memory component having a first conductive material, a second conductive material, and an oxide material between the first conductive material and the second conductive material. A resistance of the memory component is configurable via a current conducted from the first conductive material through the oxide material to the second conductive material. Other embodiments include a diode comprising metal and a dielectric material and a memory component connected in series with the diode. The memory component includes a magnetoresistive material and has a resistance that is changeable via a current conducted through the diode and the magnetoresistive material.

TECHNICAL FIELD

Memory cells, memory cell constructions, and memory cell programmingmethods.

BACKGROUND

Non-volatile memory is widely used in portable devices such as digitalcameras and personal audio players. Many different types of non-volatilememory are available, each using a different fundamental technology.Flash memory and magnetic disk memory are two examples of non-volatilememory. Some non-volatile memory may be bulky and may consume anundesirable amount of power. It is desired to extend the battery life ofportable devices that use non-volatile memory and to reduce the size ofsuch devices. Accordingly, non-volatile memory that occupies a smallarea and consumes a small amount of power is desirable.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is diagrammatic cross-sectional view of a portion of aconstruction in accordance with an embodiment.

FIG. 2 is diagrammatic cross-sectional view of a portion of aconstruction in accordance with an embodiment.

FIG. 3 shows three band-gap diagrams illustrating three different biasconditions of a diode in accordance with an embodiment.

FIG. 4 is a schematic electrical diagram of an array of memory elementsin accordance with an embodiment.

FIG. 5 is diagrammatic cross-sectional view of a portion of asemiconductor construction in accordance with an embodiment. FIG. 5 alsoshows a schematic electrical diagram of some of the components of thecross-section.

FIG. 6 is diagrammatic cross-sectional view of a portion of asemiconductor construction in accordance with an embodiment. FIG. 6 alsoshows a schematic electrical diagram of some of the components of thecross-section.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In some embodiments, cross-point memory cells are formed to includediodes. The diodes may be configured to enable current to pass to orfrom a portion of the memory cell, while also alleviating, and possiblypreventing, cross-talk between adjacent devices. The diodes may containstacked thin dielectric films, with the dielectric films beingband-structure engineered to achieve tailored diode properties forparticular memory cells.

It may be advantageous to utilize stacked dielectric materials for thediodes rather than utilizing conventional silicon-based n-p junctiondiodes. The conventional silicon-based junction diodes may be limitedrelative to bandgap, Shockley-Read-Hall (SRH) generation andrecombination rates, active doping concentrations, injection velocity,carrier lifetime, and breakdown strength (or other high field propertiessuch as ionization rates, etc.).

The cross-point memory cells may be arranged in vertical stacks.Stacking of the memory cells may substantially reduce the real estateconsumption attributed to individual memory cells. For instance, if two4F² memory cells are stacked such that one is directly over the other,then the amount of semiconductor real estate consumed by each iseffectively cut in half so that the individual memory cells areessentially only consuming 2F² of semiconductor real estate. Thereduction in effective real estate consumption increases proportionallyto the number of vertically-stacked memory cells. Thus, significantstrides in integration may be achieved by vertically stacking at leastsome of the memory cells of a memory cell array.

The stacked memory cells may be utilized as nonvolatile memory, and maycorrespond to single level cells (SLCs) or multilevel cells (MLCs). Suchnonvolatile memory may be incorporated into NAND memory arrays. Inembodiments in which multi-stacked multilevel cells (MS-MLCs) areformed, the memory may prove to be particularly low-cost,high-performance, and high-density. The stacked cells may be routedthrough multi-level interconnects.

In some embodiments, the fabrication of memory cells is conducted over asilicon substrate utilizing low-temperature deposition processes, andwith few if any high temperature dopant activation steps. Avoidance ofhigh-temperature processing may alleviate thermally-induced damage tointegrated circuit devices. Also, many of the materials showing promisefor utilization as memory elements in cross-point memory cells (forinstance, Ge₂Se₂Te₅ and other chalcogenides, various metal oxides, etc.)lack high-temperature stability.

Example embodiments are described with reference to FIGS. 1-14.

Referring to FIG. 1, a fragment of a diode construction 2 isillustrated. The fragment comprises a base 12 and a diode 26 over base12.

Base 12 may comprise semiconductor material, and in some embodiments maycomprise, consist essentially of, or consist of monocrystalline silicon.The base may be referred to as a semiconductor substrate. The terms“semiconductive substrate,” “semiconductor construction” and“semiconductor substrate” mean any construction comprisingsemiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials), and semiconductive materiallayers (either alone or in assemblies comprising other materials). Theterm “substrate” refers to any supporting structure, including, but notlimited to, the semiconductive substrates described above.

Although base 12 is shown to be homogenous, it may comprise numerouslayers in some embodiments. For instance, base 12 may correspond to asemiconductor substrate containing one or more layers associated withintegrated circuit fabrication. In such embodiments, such layers maycorrespond to one or more of metal interconnect layers, barrier layers,diffusion layers, insulator layers, etc. In some embodiments, anuppermost region of the base may comprise an electrically insulativematerial so that a conductive layer of diode 26 is directly against suchinsulative material. In some embodiments, base 12 may comprise asemiconductor-on-insulator (SOI) construction.

Diode 26 comprises conductive materials 22 and 32 and insulativematerial 34. In some embodiments, conductive materials 22 and 32 may bereferred to as conductive diode materials (or in other words, as diodeelectrodes). Conductive materials 22 and 32 may comprise any suitablecomposition or combination of compositions, and may, for example,comprise, consist essentially of, or consist of one or more of variousmetals (for instance, tantalum, platinum, tungsten, aluminum, copper,gold, nickel, titanium, molybdenum, etc.), metal-containing compositions(for instance, metal nitrides, metal silicides such as tungsten silicateor tantalum silicide, etc.), and conductively-doped semiconductormaterials (for instance, conductively-doped silicon). In someembodiments, conductive materials 22 and 32 may each have a thickness offrom about 2 nanometers to about 20 nanometers.

In some embodiments, material 22 may include one of aluminum, tungsten,molybdenum, platinum, nickel, tantalum, copper, titanium, tungstensilicide, or tantalum silicide and material 32 may include a differentone of aluminum, tungsten, molybdenum, platinum, nickel, tantalum,copper, titanium, tungsten silicide, or tantalum silicide.

Insulative material 34 may be referred to as diode dielectric material,and may comprise any suitable composition or combination ofcompositions. As illustrated by FIG. 1, insulative material 34 may be indirect physical contact with both material 22 and material 34.

In some embodiments, insulative material 34 comprises a stack ofelectrically insulative layers, with the individual layers having bandgap and/or band-alignment properties tailored for the particularapplication of the diode. The layers may have individual thicknesses offrom about 0.7 nanometers to about 5 nanometers and may comprise,consist essentially of, or consist of one or more compositions selectedfrom the group consisting of aluminum nitride, aluminum oxide, hafniumoxide, magnesium oxide, niobium oxide, silicon nitride, silicon oxide,tantalum oxide, titanium oxide, yittrium oxide, and zirconium oxide. Theoxide and nitrides are referred to in terms of the principal components,rather than in terms of specific stoichiometries. Accordingly, the oxideof silicon is referred to as silicon oxide, which encompasses thestoichiometry of silicon dioxide.

Diode 26 may be configured to conduct current from material 32 tomaterial 22 when a first voltage is applied across material 32 andmaterial 22 with material 32 being at a higher potential than material22. Diode 26 may also be configured to inhibit current from flowing frommaterial 22 to material 34 when a second voltage is applied acrossmaterial 32 and material 22 with material 22 being at a higher potentialthan material 32. Accordingly, the second voltage may have a polarityopposite that of a polarity of the first voltage. In some embodiments,the first voltage may be between about 0.5 volts and 1.5 volts and thesecond voltage may be between about 0 volts and −15 volts. Accordingly,diode 26 may be characterized as a selectively conducting device whoseability to conduct current depends on an applied bias voltage.

In some embodiments, the first voltage may have the same magnitude asthe second voltage. Accordingly, diode 26 may allow current to flow frommaterial 32 to material 22 when forward biased with a voltage but mayinhibit current from flowing from material 22 to material 32 whenreverse biased with the same voltage.

Tunneling properties of material 34, and/or carrier injection propertiesof conductive materials 22 and 32, may be tailored to engineer desiredproperties into diode 26. For example, materials 22, 32, and 34 may beengineered so that diode 26 allows electrons to tunnel from material 22through material 34 to material 32 when the first voltage describedabove is applied across material 32 and material 22 but inhibitselectrons from tunneling from material 32 to material 22 when the secondvoltage described above is applied across material 32 and material 22.

Referring to FIG. 2, a fragment of a diode construction 4 isillustrated. Similar numbering is used in referring to FIG. 2 as is usedabove in describing FIG. 1 where appropriate. Fragment 4 depicts anotherembodiment of diode 26. Fragment 4 includes base 12 and diode 26 overbase 12.

In the shown embodiment, diode dielectric material 34 comprises a stackof three different dielectric compositions 54, 56, and 58. Suchcompositions may be tailored relative to one another so that band gaps,and/or conduction band edges, and/or valence band edges, between thecompositions enable tunneling of carriers in one direction through thecompositions, but not in an opposing direction.

Dielectric compositions 54, 56, and 58 may comprise any suitablecompositions, and may, for example, comprise one or more compositionsselected from the group consisting of aluminum nitride, aluminum oxide,hafnium oxide, magnesium oxide, niobium oxide, silicon nitride, siliconoxide, tantalum oxide, titanium oxide, yittrium oxide, and zirconiumoxide.

Although example diode 26 of FIG. 2 has three different dielectriccompositions (54, 56, and 58), in other embodiments diode 26 maycomprise other than three different dielectric compositions.Specifically, in some embodiments diode 26 may comprise more than threedifferent dielectric compositions, and in other embodiments diode 26 maycomprise less than three different dielectric compositions. The numberof different dielectric compositions used in diode 26 may affect thespeed with which the diode reacts to a voltage. For example, as thenumber of different dielectric compositions increases, a differencebetween a time when diode 26 is biased with a voltage and a time whencurrent begins to flow through diode 26 responsive to the voltage maydecrease. However, as the number of different dielectric compositionsincreases, a magnitude of a voltage used to forward bias diode 26 mayalso increase.

The embodiment of FIG. 2 may be fabricated as follows. Initially,material 22 may be formed over base 12. Material 22 may be patterned byutilizing photolithographic processing and one or more etches.Subsequently, composition 54 may be formed over material 22. In someembodiments, composition 54 may be deposited on material 22 and may bepatterned using photolithographic processing and one or more etches.Composition 54 may be deposited with any suitable methodology,including, for example, atomic layer deposition (ALD). Compositions 56and 58 may subsequently be deposited over composition 54 using one ormore of the techniques described above in relation to composition 54.

In some embodiments, the methods used in forming composition 54, 56, and58 may be selected so that the methods do not substantially change thedimensions of material 22 or otherwise render material 22 inoperable asan electrode of diode 26. For example, a maximum temperature used informing composition 54, 56, and 58 may be below a melting temperature ofmaterial 22 so that material 22 does not change dimension or shape as aresult of the formation of compositions 54, 56, and 58. By way ofanother example, compositions 54, 56, and 58 may be undoped.Accordingly, annealing might not be used in forming compositions 54, 56,and 58. Forming these compositions without annealing may be advantageousbecause annealing may involve undesirably altering dimensions ofmaterial 22 as a result of high temperatures used during annealing.

Subsequently, material 32 may be formed over composition 58. Material 32may be patterned by utilizing photolithographic processing and one ormore etches. Material 32 may be undoped and the formation of material 32might not use a temperature higher than a melting temperature ofmaterial 22.

FIG. 3 shows band gap diagrams of diode 26 in an unbiased condition(diagram 60), a forward biased condition (diagram 62) and a reversebiased condition (diagram 64). Diagrams 60 and 64 show that in anunbiased condition, and in a reverse biased condition, bands fromdielectric compositions 58, 56, and 54 preclude migration of carriersbetween conductive materials 22 and 32. In contrast, diagram 62 showsthat tunneling may occur in a forward biased condition so that carriers(specifically electrons in the shown embodiment) may tunnel fromconductive material 22 to conductive material 32 via quantum wells 66.The flow of the carriers is diagrammatically illustrated with a dashedarrow 63 in FIG. 3. It is noted that the diodes shown in FIGS. 1 and 2are oriented for current flow from conductive material 32 to conductivematerial 22. Such is consistent with the diagrams of FIG. 3 whichillustrate electron flow from conductive material 22 to conductivematerial 32 (in other words, in an opposite direction to the currentflow). In other embodiments, the arrangement of compositions 54, 56, and58 may be reversed so that the electron flow in the forward-biasedcondition is from conductive material 32 to conductive material 22.

The band structures of FIG. 3 may be considered engineered bandstructures. Heterostructures may be formed by molecular beam epitaxy(MBE) growth of III/V materials. In dielectric materials, a band gap maybe engineered through thermal treatments (such as thermal treatment ofaluminum oxides), as is known for nonvolatile memory cells (such as“crested barrier” cells and VARIOT flash cells). The band gap engineeredstructures may exploit characteristics of band-edge discontinuities incarrier transport in the semiconductor, and/or may exploitcharacteristics of band-edge discontinuities in charge storage of thedielectric. For nonvolatile memory cells, this may enable optimizationof retention, and endurance characteristics.

Deposition of thin layers of dielectric material may create localquantum wells 66 which may be exploited in the diode structuresdescribed herein. The conduction band and valence band edges of thedielectrics may be engineered by material choice and/or thermaltreatments. Fermi-level pinning in the metal region may be engineered bytailoring the compositions of the conductive materials at the tops andbottoms of the diodes. The barrier heights along the dielectricthickness may determine the tunneling characteristics of the structures.

The diodes described in FIGS. 1 and 2 may be considered band-gapengineered in that compositions of materials 22, 32, 54, 56, and 58 arechosen so that the forward-biased tunneling of diagram 62 occurs. Inchoosing materials 22 and 32, work functions may be considered. A workfunction may be related to an amount of energy used to remove anelectron from a metal. In FIG. 3, heights of the bars corresponding tomaterials 22 and 32 may represent work functions of materials 22 and 32.As illustrated in FIG. 3, material 22 may have a higher work function(represented by a higher bar) than material 32. Consequently, an amountof energy used to remove an electron from material 22 may be larger thanan amount of energy used to remove an electron from material 32.Designing material 22 to have a higher work function than material 32may help enable electrons to tunnel from material 22 throughcompositions 54, 56, and 58 to material 32.

In choosing compositions 54, 56, and 58, barrier heights may beconsidered. A barrier height may be related to an energy differencebetween a conduction band of a material and a valence band of thematerial. In FIG. 3, heights of the bars corresponding to compositions54, 56, and 58 may represent barrier heights of compositions 54, 56, and58. In some embodiments, barrier heights of compositions 54, 56, and 58may be greater than work functions of materials 22 and 32 as isillustrated by diagram 60 of FIG. 3.

Band-gap engineering diode 26 may include selecting compositions 54, 56,and 58 so that barrier heights of compositions 54, 56, and 58 have aparticular relationship. For example, each of compositions 54, 56, and58 may have a different barrier height. Further, as illustrated indiagram 60, compositions 54, 56, and 58 may be arranged betweenmaterials 22 and 32 in order of increasing barrier height. Accordingly,composition 54 (which is closest to material 22) may have the lowestbarrier height of compositions 54, 56, and 58, composition 56 may have abarrier height larger than composition 54, and composition 58 may have abarrier height larger than composition 56.

Compositions 54, 56, and 58 may be chosen to have valence band energylevels that are aligned with respect to one another. By way of example,the valence band energy levels of compositions 54, 56, and 58 may bealigned if the valence band energy levels of compositions 54, 56, and 58are substantially the same. Alternatively, compositions 54, 56, and 58may be chosen to have conduction band energy levels that are alignedwith respect to one another. By way of example, the conduction bandenergy levels of compositions 54, 56, and 58 may be aligned if theconduction band energy levels of compositions 54, 56, and 58 aresubstantially the same.

Compositions 54, 56, and 58 may be selected so that quantum wells 66 arecreated at the junction between composition 54 and composition 56 and atthe junction between composition 56 and 58 when diode 26 is forwardbiased. As was described above, diode 26 may be forward biased by avoltage applied across materials 32 and 22 so that material 32 is at ahigher potential than material 22. Furthermore, in a forward biasedcondition, quantum wells might form between conductive materials at thetops and bottoms of the diodes (with such conductive materials being theelectrodes of the diodes).

The quantum wells will have discrete energy levels. The contact betweenone electrode and an adjacent dielectric will have a first Fermi level.When energy is provided the state may be raised to a first allowedquantum energy level, which may dramatically increase the probability ofcarrier tunneling. This may lead to an effective lowering of thepotential barrier in the dielectric.

In a reverse bias condition (such as the condition depicted by diagram64), the potential barrier is high and formation of any quantum well issuppressed. There is, therefore, a low probability for conductioncurrent to flow from one metal to another—due to reduced tunneling,which approaches zero—if the dielectric thickness is appropriatelytailored.

Tunneling characteristics across structures such as diode 26 indicatethat there may be a sharp turn-on characteristic when the Fermi levelcorresponds to a lowest allowed quantum energy level. The results may bemodified in the presence of phonons at higher temperatures, but anon-linear characteristic may result from such structure.

Tunneling may be a very fast process, and may occur in femtoseconds.Tunneling may also be relatively independent of temperature.Accordingly, thin film diodes of the type described herein may be ableto be switched very fast, and to meet high temperature reliabilitycriteria. For example, diode 26 may be forward biased and current mayflow through diode 26. Diode 26 may subsequently be reverse biased sothat current is inhibited from flowing through diode 26. Diode 26 may berepeatedly forward biased and then reverse biased in this manner at ahigh rate. In some embodiment, the rate may exceed 10 Ghz.

Some example compositions suitable for the band-gap engineered diodesare aluminum for material 22, aluminum oxide for composition 58, silicondioxide for composition 56, silicon nitride for composition 54, andtungsten for material 32. Another set of exemplary compositions ismolybdenum for material 22, silicon dioxide for composition 58, siliconnitride for composition 56, hafnium oxide for composition 54 andplatinum for material 32. Another set of exemplary compositions isplatinum for material 22, silicon dioxide for composition 58, hafniumoxide for composition 56, zirconium oxide for composition 54 and nickelfor material 32.

FIG. 4 is a schematic circuit diagram illustrating one embodiment of anarray of memory cells. Each memory cell includes a diode 26 and a memoryelement 28 connected in series between a bitline 22 and a wordline 24.Memory element 28 may be configured in one of two or more differentresistive states. Consequently, the resistive state of memory element 28may be used to represent one or more bits of information.

To determine a resistive state of a selected one of the memory cells ofFIG. 4, a read voltage may be applied across a selected one of thewordlines 24 and a selected one of the bitlines 22. In response, acurrent may flow from the selected wordline 24 to the selected bitline22. This current may be measured to determine a resistive state of thememory element 28 of the selected memory cell. For example, if memoryelement 28 is configured to be programmed in either a high resistancestate or a low resistance state, the current may be measured todetermine whether the current corresponds to the high resistance stateor the low resistance state.

While the read voltage is being applied across the selected wordline andthe selected bitline, voltages may be applied to the other(non-selected) wordlines and bitlines. These voltages may ensure anaccurate measurement of the current flowing through the selected celland may prevent the read voltage and the current flowing through theselected cell from affecting the resistive states of the other(non-selected) memory cells of the array.

For example, voltages may be applied across the non-selected memorycells so that the non-selected bitlines are at an equal or higherpotential than the selected wordline, thereby preventing current fromflowing through the diodes of the non-selected memory cells sharing theselected wordline.

In some embodiments, the memory cell may be used to store a single bitof information with the low resistance state corresponding to a bitvalue of “0” and the high resistance state corresponding to a bit valueof “1” or vice-versa.

In some embodiments, memory element 28 may be configured in one of fourdifferent resistive states. Accordingly, memory element 28 may representtwo bits of information. Of course, other embodiments are possible inwhich memory element 28 has more or fewer than four different resistivestates and therefore represents more or fewer than two bits ofinformation.

As will be described below, the resistive state of memory element 28 maybe reversibly altered. For example, if memory element 28 is configuredto have one of two different resistive states—“A” and “B”—and memoryelement 28 is currently in resistive state “A,” memory element 28 may bealtered to be in resistive state “B” and may subsequently be alteredagain to be in resistive state “A.” In some embodiments, the resistivestate of memory element 28 may be repeatedly changed withoutsubstantially affecting the ability of the memory cell to store one ormore bits of information.

Referring to FIG. 5, a fragment of a construction 6 is illustrated.Similar numbering is used in referring to FIG. 5 as is used above indescribing FIGS. 1-4 where appropriate. Fragment 6 is one embodiment ofa construction of one of the memory cells of FIG. 4. Fragment 6comprises a base 12 (described above) and a memory cell 10 over base 12.

A schematic electrical diagram 8 is shown adjacent fragment 6 toillustrate some of the electrical components of fragment 6. Electricaldiagram 8 shows that memory cell 10 comprises a wordline 24, a memoryelement 28, a diode 26, and a bitline 22.

Wordline 24 and bitline 22 are shown in construction 6 to compriseelectrically conductive material. Such electrically conductive materialmay comprise any suitable composition or combination of compositions,including one or more of various metals (for instance, tantalum,platinum, tungsten, aluminum, copper, gold, etc.), metal-containingcompositions (for instance, metal nitrides, metal silicides, etc.), andconductively-doped semiconductor materials (for instance,conductively-doped silicon). The individual wordlines and bitlines mayhave thicknesses of from about 2 nanometers to about 20 nanometers.

Wordline 24, memory element 28, and conductive material 32 together formmemory component 52. Memory element 28 may comprise any suitablecomposition or combination of compositions, and may, for example,comprise, consist essentially of, or consist of one or moremagnetoresistive materials susceptible to undergoing areduction-oxidation (redox) process. In some embodiments memory element28 may comprise one or more metal oxides that exhibit two differentstable stoichiometric states.

For example, memory element 28 may comprise iron oxide and may beconfigured in one of two different resistive states. In a first one ofthe two resistive states, memory element 28 may comprise primarily Fe₃O₄and may comprise more Fe₃O₄ than Fe₂O₃. In this resistive state, memoryelement 28 may have a relatively low resistance of about 5e3 Ohms.

In a second one of the two resistive states, memory element 28 maycomprise primarily Fe₂O₃ and may comprise more Fe₂O₃ than Fe₃O₄.Accordingly, in the first resistive state, memory element 28 may have ahigher concentration of oxygen than in the second resistive state. Inthe second resistive state, memory element 28 may have a relatively highresistance of about 1e5 Ohms.

When in the first resistive state, memory element 28 may be reconfiguredin the second resistive state instead of the first resistive state. Insome embodiments, a programming voltage may be applied across wordline24 and bitline 22. The voltage may be up to 15 volts. In response to theprogramming voltage, a programming current may travel through memoryelement 28. The current may be sufficient to cause a redox reaction inmemory element 28 thereby reconfiguring memory element in the secondresistive state instead of the first resistive state. In someembodiments the programming current may be in the form of a currentpulse having a duration of less than 1 millisecond.

Memory element 28 may remain in the second resistive state after theprogramming current and/or the programming voltage have beendiscontinued. In some embodiments, memory element 28 may be doped with aquantity of metallic atoms e.g., up to 1e15 atoms per cm³. The metallicatoms may increase an amount of time a magnetoresistive material ofmemory element 28 retains a particular resistive state as compared to anamount of time the memory cell would retain the particular resistivestate if memory element 28 was undoped by preventing a redox reactionthat would alter the resistive state of memory element 28 from takingplace. In some embodiments, the metallic ions may be copper ions and/orzinc ions.

Once memory element 28 has been reconfigured in the second resistivestate, memory element 28 may be reconfigured in the first resistivestate. In some embodiments, a programming voltage may be applied acrossbitline 22 and wordline 24 so that bitline 22 is at a higher potentialthan wordline 24. As a result of the voltage, an electric field mayexist across memory element 28. The electric field may be of sufficientintensity to cause a redox reaction in memory element 28 so that memoryelement 28 is reconfigured in the first resistive state. In someembodiments, the programming voltage may be up to 15 volts and may bebetween 10 volts and 15 volts. In some embodiments, little or no currentmay flow through memory element 28 as a result of the voltage becausediode 26 may be reverse biased and may inhibit a current from flowingfrom bitline 22 to wordline 24.

In some embodiments, one or more conductive bridges may be formedthrough memory element 28 as a result of the redox reaction caused bythe programming current. The one or more conductive bridges may besevered by a programming voltage applied across bitline 22 and wordline24 so that bitline 22 is at a higher potential than wordline 24. In someembodiments, a plurality of slightly different voltage levels mayrespectively sever the multiple conductive bridges.

Alternatively, in some embodiments, the one or more conductive bridgesmay be severed by a programming current flowing from material 32 throughmaterial 40 into material 38.

Conductive material 32, insulative material 34 (comprising dielectriccompositions 54, 56, and 58 as was described above in relation to FIG.2), and bitline 22 together form diode 26 as was described in detailabove in relation to FIGS. 1-3. Conductive material 32 is overlapped bymemory component 35 and diode 26. In some embodiments, conductivematerial 32 may be referred to as conductive diode material (or in otherwords, as a diode electrode), even though material 32 is also part ofmemory component 52.

As was described above in relation to FIG. 3, diode 26 may be configuredso as to enable electrons to tunnel through insulative material 34. Dueto this tunneling, electrons exiting diode 26 via material 32 andentering memory element 28 may have a very high energy level. Forexample, the electrons may have an energy level that is between 2.0 and3.0 electron volts higher than an energy level that the electrons wouldhave if diode 26 was a convention p-n diode. In some embodiments, theelectrons may have an energy level of at least 3.5 to 4.0 electronvolts. Due to the high energy level, the electrons may be predominantlyballistic. Ballistic electrons may more efficiently cause the redoxreaction in memory element 28 than non-ballistic electrons. For example,a programming voltage used to program memory cell 10 may be lower than aprogram a memory cell having a conventional p-n diode since diode 26 ofmemory cell 10 provides ballistic electrons having a higher energy levelthan non-ballistic electrons provided by conventional p-n diodes.

In schematic electrical diagram 8, diode 26 is shown between bitline 22and memory element 28. In other embodiments, diode 26 may beadditionally, or alternatively, provided between wordline 24 and memoryelement 28.

In the shown embodiment, diode 26 permits current flow from memorycomponent 52 to bitline 22, but restricts current flow in the opposingdirection. Such can enable reading to and writing from individual memoryelements, while limiting cross-talk between adjacent memory elements.

Although diode 26 is shown oriented to direct current flow from memorycomponent 52 to bitline 22, in other embodiments the orientation ofdiode 26 may be reversed. Accordingly, diode 26 may be oriented topermit current flow from bitline 22 to memory component 52, and torestrict current flow in the opposing direction.

In some embodiments, memory cell 10 may be incorporated into an arraycomprising vertical stacking of memory cells and/or horizontalarrangement of memory cells. In some embodiments, wordline 24 may bepart of a plurality of memory cells (e.g., a column of memory cells asillustrated in FIG. 4) in addition to memory cell 10 and may extendsubstantially orthogonally to bitline 22. Bitline 22 may be part ofplurality of memory cells (e.g., a row of memory cells as illustrated inFIG. 4) in addition to memory cell 10. The term “substantiallyorthogonally” means that the bitlines and wordlines are more orthogonalto one another than not, which can include, but is not limited to,embodiments in which the wordlines and bitlines are entirely exactlyorthogonal to one another.

The embodiment of FIGS. 4 and 5 may be fabricated as follows. Initially,bitlines 22 may be formed over semiconductor base (or substrate) 12.Bitlines 22 may be patterned utilizing photolithographic processing andone or more etches to pattern bitline material into a plurality oflines.

Subsequently, a first level of diode dielectric material 34 (which maybe a stack of multiple dielectric compositions, e.g., as discussed abovein relation to FIGS. 1-3) is formed over the bitlines. Diode dielectricmaterial 34 may be deposited across the bitlines and spaces between thebitlines, and then patterned utilizing photolithographic processing andone or more etches to create the configuration shown in FIG. 5. In someembodiments, diode dielectric material 34 is only at cross-points of thewordlines and bitlines. In some embodiments, the diode dielectricmaterial may be left between the bitlines rather than patterned to beonly at cross-points of the wordlines and bitlines. Diode dielectricmaterial 34 may be deposited with any suitable methodology, including,for example, ALD.

A first level of electrically conductive diode material (i.e., a diodeelectrode) 32 is then formed over diode dielectric material 34.Electrically conductive material 32 may be formed in the configurationshown in FIG. 5 by depositing the material and then patterning it with aphotolithographically patterned mask and one or more etches.

Memory elements 28 are then formed over electrically conductive material32. The memory elements may be formed by depositing memory elementmaterial across the bitlines and spaces between the bitlines, and thenpatterning the memory element material utilizing photolithographicprocessing and one or more etches to create the shown configuration inwhich the memory element material is only at cross-points of thewordlines and bitlines. In some embodiments, the memory element materialmay be left between the bitlines rather than patterned to be only atcross-points of the wordlines and bitlines.

A first level of wordline material is formed over the memory elements.The wordline material may be deposited across the bitlines and spacesbetween the bitlines, and then patterned utilizing photolithographicprocessing and one or more etches to create the shown configuration inwhich the bitlines are substantially orthogonal to the wordlines.

Subsequent levels of bitlines, diode dielectric, conductive diodematerial, memory elements, and wordlines may be formed using subsequentiterations of the above-discussed processing, separated by a passivationmaterial, to form vertically-stacked memory arrays to desired heights.In some embodiments, the vertical stacks may comprise at least 3 memorycells, at least 10 memory cells, or at least 15 memory cells.

The vertically-stacked memory cells may be identical to one another, ormay differ from one another. For instance, the diode material utilizedfor memory cells at one level of a vertical stack may be different incomposition from the diode material utilized for memory cells at anotherlevel of a vertical stack; or may be the same composition as the diodematerial utilized for the memory cells at the other level of thevertical stack.

FIG. 5 illustrates diode 26 provided between the bitline 22 and memorycomponent 52. In other configurations, including configurations in whichmemory cells are stacked as discussed above, diode 26 may be providedbetween memory component 52 and wordline 24. The fabrication processutilized to form such other configurations may be similar to thatutilized to form the configuration of FIG. 5, except that the conductivediode material and diode dielectric material may be formed afterformation of the memory elements rather than before formation of thememory elements. In yet other embodiments, the orientation of thewordlines and bitlines in the memory cells may be reversed (so that thewordlines are under the bitlines) and the diodes may be formed eitherbetween the wordlines and the memory elements, or between the bitlinesand the memory elements.

Other configurations of memory element 28 are also possible.

Referring to FIG. 6, a fragment of a construction 8 is illustrated.Similar numbering is used in referring to FIG. 6 as is used above indescribing FIGS. 1-5 where appropriate. FIG. 6 illustrates analternative embodiment of memory element 28. Fragment 8 is oneembodiment of a construction of one of the memory cells of FIG. 4.Fragment 8 comprises a base 12 (described above) and a memory cell 10over base 12.

A schematic electrical diagram 14 is shown adjacent fragment 8 toillustrate some of the electrical components of fragment 8. Electricaldiagram 14 shows that memory cell 10 comprises wordline 24, diode 26,and bitline 22, each of which are described in detail above.

Memory cell 10 also comprises memory element 28, which in the embodimentdepicted in FIG. 6 includes material 38 and material 40. Material 38 maycomprise, consist essentially of, or consist of an ion-rich conductivematerial such as ionic copper or ionic silver. In some embodiments,material 38 may be embedded and activated by a reactive ion such astellurium or selenium. Accordingly, material 38, in some embodiments,may comprise one or more of Cu—Te, Cu—Se, Ag—Te, or Ag—Se, which arereferred to in terms of the principal components, rather than in termsof specific stoichiometries.

In some embodiments, material 38 may comprise, consist essentially of,or consist of a doped chalcogenides and the doped chalcogenides may be aglass. For example, material 38 may comprise one or more of germanium,selenium, tellurium, or silver. Material 38 may be doped with germanium,selenium, tellurium, or silver at a concentration of 1.0e16 to 5.0e17atoms per cm³.

Material 40 may be a thin oxide material such as a metal oxide. In someembodiments, material 40 may have a thickness of less than 25 Angstroms.Material 40 may be in direct physical contact with material 38 andmaterial 32. Accordingly, material 40 may impose a separation betweenmaterial 38 and material 32 of less than 25 Angstroms.

Memory element 28 may be configured in one of two or more differentresistive states. In some embodiments, memory element 28 may beconfigured in one of two different resistive states. In a first one ofthe two resistive states, memory element 28 may have a relatively highresistance (e.g., between around 1 mega ohm and 100 mega ohms). In asecond one of the two resistive states, memory element 28 may have arelatively low resistance (e.g., between around 6.5 k ohms and 10 kohms).

When in the first resistive state, memory element 28 may be reconfiguredin the second resistive state instead of the first resistive state. Insome embodiments, a programming voltage may be applied across wordline24 and bitline 22. The voltage may be up to 15 volts. In response to theprogramming voltage, a programming current may travel through memoryelement 28. The current may cause ions from material 38 to be swept frommaterial 38 into material 40 due to momentum transfer between the ionsand electrons of the current. In some embodiments, the movement of ionsfrom material 38 into material 40 may be referred to aselectromigration. The ions may form a conductive bridge between material38 and material 32 that may reduce the resistance of memory element 28,thereby reconfiguring memory element 28 in the second one of the tworesistive states. In some embodiments the programming current may be inthe form of a current pulse having a duration of as long as severalmilliseconds or as short as several microseconds.

Memory element 28 may remain in the second resistive state after theprogramming current and/or the programming voltage have beendiscontinued.

Once memory element 28 has been reconfigured in the second resistivestate, memory element 28 may be reconfigured in the first resistivestate. In some embodiments, a programming voltage may be applied acrossbitline 22 and wordline 24 so that bitline 22 is at a higher potentialthan wordline 24. As a result of the voltage, an electric field mayexist across memory element 28. The electric field may be of sufficientintensity to sever the conductive bridge formed by the migrated ions sothat memory element 28 is reconfigured in the first resistive state. Insome embodiments, the programming voltage may be up to 15 volts. In someembodiments, little or no current will flow through memory element 28 asa result of the voltage because diode 26 may be reverse biased and mayinhibit a current from flowing from bitline 22 to wordline 24.

In some embodiments, multiple conductive bridges may be present and eachof the multiple conductive bridges may be severed at a slightlydifferent voltage level. Alternatively, in some embodiments, theconductive bridge may be severed by a programming current flowing frommaterial 32 through material 40 into material 38.

As was described above in relation to FIG. 3, diode 26 may be configuredso as to enable electrons to tunnel through insulative material 34. Dueto this tunneling, electrons exiting diode 26 via material 32 andentering material 40 may have a very high energy level and may beballistic as was described above in relation to FIG. 5. Ballisticelectrons may more efficiently cause the migration of ions from material38 into material 40 than non-ballistic electrons. For example, aprogramming voltage used to program memory cell 10 may be lower than aprogram a memory cell having a conventional p-n diode since diode 26 ofmemory cell 10 provides ballistic electrons having a higher energy levelthan non-ballistic electrons provided by conventional p-n diodes.

In schematic electrical diagram 14, diode 26 is shown between bitline 22and memory element 28. In other embodiments, diode 26 may beadditionally, or alternatively, provided between wordline 24 and memoryelement 28.

The embodiment of FIG. 6 may be fabricated as follows. Initially,bitlines 22 may be formed over semiconductor base (or substrate) 12.Bitlines 22 may be patterned utilizing photolithographic processing andone or more etches to pattern bitline material into a plurality oflines.

Subsequently, a first level of diode dielectric material 34 (which maybe a stack of multiple dielectric compositions, e.g., as discussed abovein relation to FIGS. 1-3) is formed over the bitlines. Diode dielectricmaterial 34 may be deposited across the bitlines and spaces between thebitlines, and then patterned utilizing photolithographic processing andone or more etches to create the configuration shown in FIG. 5. In someembodiments, diode dielectric material 34 is only at cross-points of thewordlines and bitlines. In some embodiments, the diode dielectricmaterial may be left between the bitlines rather than patterned to beonly at cross-points of the wordlines and bitlines. Diode dielectricmaterial 34 may be deposited with any suitable methodology, including,for example, ALD.

A first level of electrically conductive diode material (i.e., a diodeelectrode) 32 is then formed over diode dielectric material 34.Electrically conductive material 32 may be formed in the configurationshown in FIG. 5 by depositing the material and then patterning it with aphotolithographically patterned mask and one or more etches.

Memory elements 28 are then formed over electrically conductive material32. The memory elements may be formed by first depositing material 40over material 32 and then depositing material 38 over material 40.Materials 38 and 40 may be patterned utilizing photolithographicprocessing and one or more etches to create the shown configuration inwhich memory element 28 is only at cross-points of the wordlines andbitlines. In some embodiments, materials 38 and 40 may be left betweenthe bitlines rather than patterned to be only at cross-points of thewordlines and bitlines.

A first level of wordline material is formed over the memory elements.The wordline material may be deposited across the bitlines and spacesbetween the bitlines, and then patterned utilizing photolithographicprocessing and one or more etches to create the shown configuration inwhich the bitlines are substantially orthogonal to the wordlines.

Subsequent levels of bitlines, diode dielectric, conductive diodematerial, memory elements, and wordlines may be formed using subsequentiterations of the above-discussed processing, separated by a passivationmaterial, to form vertically-stacked memory arrays to desired heights.In some embodiments, the vertical stacks may comprise at least 3 memorycells, at least 10 memory cells, or at least 15 memory cells.

The vertically-stacked memory cells may be identical to one another, ormay differ from one another. For instance, the diode material utilizedfor memory cells at one level of a vertical stack may be different incomposition from the diode material utilized for memory cells at anotherlevel of a vertical stack; or may be the same composition as the diodematerial utilized for the memory cells at the other level of thevertical stack.

FIG. 6 illustrates diode 26 provided between the bitline 22 and memorycomponent 52. In other configurations, including configurations in whichmemory cells are stacked as discussed above, diode 26 may be providedbetween memory component 52 and wordline 24. The fabrication processutilized to form such other configurations may be similar to thatutilized to form the configuration of FIG. 6, except that the conductivediode material and diode dielectric material may be formed afterformation of the memory elements rather than before formation of thememory elements. In yet other embodiments, the orientation of thewordlines and bitlines in the memory cells may be reversed (so that thewordlines are under the bitlines) and the diodes may be formed eitherbetween the wordlines and the memory elements, or between the bitlinesand the memory elements.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1-19. (canceled)
 20. A memory cell comprising: a diode comprising metaland a dielectric material; a memory component connected in series withthe diode and comprising a magnetoresistive material, the memorycomponent having a resistance that is changeable via a current conductedthrough the diode and the magnetoresistive material.
 21. The memory cellof claim 20 wherein the magnetoresistive material is doped with aquantity of metallic atoms so that an amount of time themagnetoresistive material retains a resistance is longer than an amountof time the memory cell would retain the modified resistance if themagnetoresistive material was undoped.
 22. The memory cell of claim 21wherein the metallic ions are copper ions or zinc ions.
 23. The memorycell of claim 20 wherein the magnetoresistive material comprises an ironoxide.
 24. The memory cell of claim 20 wherein the dielectric materialcomprises a plurality of layers, individual layers of the plurality oflayers having different dielectric compositions relative to one another,the dielectric material being configured to form quantum wells atjunctions between the layers of the plurality responsive to a voltagebeing applied across the diode.
 25. The memory cell of claim 24 whereinindividual layers of the plurality of layers have thicknesses less thanor equal to 6 nanometers.
 26. The memory cell of claim 20 wherein thediode is configured to conduct electrons that are predominantlyballistic and have an energy of at least 3.0 electronvolts. 27.(canceled)
 28. A memory cell programming method comprising: providing amemory cell comprising: a memory element comprising a magnetoresistivematerial, the memory element being in a first resistive state and havinga first resistance; and a diode comprising metal and a dielectricmaterial, the diode and the memory element being connected together inseries; and conducting a current through the memory element and thediode effective to reconfigure the memory element to be in a secondresistive state different than the first resistive state and have asecond resistance different than the first resistance.
 29. The method ofclaim 28 wherein the magnetoresistive material undergoes areduction-oxidation process responsive to the conducting of the current.30. The method of claim 28 wherein while in the first resistive state,the magnetoresistive material comprises a higher concentration of oxygenthan while in the second resistive state.
 31. The method of claim 28:wherein while in the first resistive state, the memory cell comprisesmore Fe₃O₄ than Fe₂O₃; and wherein when in the second resistive statethe memory cell comprises more Fe₂O₃ than Fe₃O₄.
 32. The method of claim28 wherein the current is in the form of a current pulse.
 33. The methodof claim 28 further comprising ceasing the conducting of the currentafter the memory element has been reconfigured in the second resistivestate and wherein the memory element remains in the second resistivestate in the absence of the current.
 34. The method of claim 28 furthercomprising subsequent to the conducting of the current, applying avoltage across the memory device effective to reconfigure the memorycell back to the first resistive state.